1/8 may 2002 ste53NC50 n-channel 500v - 0.070 w - 53a isotop powermesh?ii mosfet (1) i sd 53a, di/dt 100 a/ m s, v dd 24v, tj t jmax n typical r ds (on) = 0.07 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor driver absolute maximum ratings (?)pulse width limited by safe operating area type v dss r ds(on) i d ste53NC50 500v < 0.08 w 53 a symbol parameter value unit v ds drain-source voltage (v gs = 0) 500 v v dgr drain-gate voltage (r gs = 20 k w ) 500 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 53 a i d drain current (continuos) at t c = 100c 33 a i dm ( l ) drain current (pulsed) 212 a p tot total dissipation at t c = 25c 460 w derating factor 3.68 w/c dv/dt (1) peak diode recovery voltage slope 3 v/ns v iso insulation winthstand voltage (ac-rms) 2500 v t stg storage temperature C 65 to 150 c t j max. operating junction temperature 150 c isotop internal schematic diagram
ste53NC50 2/8 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. rthj-case thermal resistance junction-case max 0.272 c/w rthc-h thermal resistance case-heatsink with conductive grease applied 0.05 c/w symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 53 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 1043 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 10 a v ds = max rating, t c = 125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs , i d = 250a 234v r ds(on) static drain-source on resistance v gs = 10v, i d = 27a 0.07 0.08 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds > i d(on) x r ds(on)max, i d = 15 a 42 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs = 0 11.2 nf c oss output capacitance 1350 pf c rss reverse transfer capacitance 115 pf
3/8 ste53NC50 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 250v, i d = 26.5a r g = 4.7 w v gs = 10v (see test circuit, figure 3) 46 ns t r rise time 70 ns q g total gate charge v dd = 400v, i d = 53a, v gs = 10v 310 434 nc q gs gate-source charge 46 nc q gd gate-drain charge 150 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 400v, i d = 53a, r g = 4.7 w, v gs = 10v (see test circuit, figure 5) 45 ns t f fall time 38 ns t c cross-over time 85 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 53 a i sdm (2) source-drain current (pulsed) 212 a v sd (1) forward on voltage i sd = 53a, v gs = 0 1.6 v t rr reverse recovery time i sd = 53a, di/dt = 100a/s, v dd = 70v, t j = 150c (see test circuit, figure 5) 760 ns q rr reverse recovery charge 17.86 c i rrm reverse recovery current 47 a safe operating area thermal impedence
ste53NC50 4/8 gate charge vs gate-source voltage transconductance output characteristics capacitance variations static drain-source on resistance transfer characteristics
5/8 ste53NC50 source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
ste53NC50 6/8 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
7/8 ste53NC50 dim. mm inch min. typ. max. min. typ. max. a 11.8 12.2 0.466 0.480 b 8.9 9.1 0.350 0.358 c 1.95 2.05 0.076 0.080 d 0.75 0.85 0.029 0.033 e 12.6 12.8 0.496 0.503 f 25.15 25.5 0.990 1.003 g 31.5 31.7 1.240 1.248 h4 0.157 j 4.1 4.3 0.161 0.169 k 14.9 15.1 0.586 0.594 l 30.1 30.3 1.185 1.193 m 37.8 38.2 1.488 1.503 n4 0.157 o 7.8 8.2 0.307 0.322 b e h o n j k l m f a c g d isotop mechanical data
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